Anisotropy effects during non-selective epitaxial growth of Si and SiGe materialsPRIBAT, Clément; DUTARTRE, Didier.Journal of crystal growth. 2011, Vol 334, Num 1, pp 138-145, issn 0022-0248, 8 p.Article

Equilibre de phases du système Al-Ga-As-Ge: application à l'épitaxie en phase liquide = Phase equilibria of Al-Ga-As-Ge system: application to liquid epitaxyDUTARTRE, Didier.1983, 165 pThesis

High-Performance High-K/Μetal Planar Self-Aligned Gate-All-Around CMOS DevicesPOUYDEBASQUE, Arnaud; DENORME, Stéphane; SKOTNICKI, Thomas et al.IEEE transactions on nanotechnology. 2008, Vol 7, Num 5, pp 551-557, issn 1536-125X, 7 p.Article

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applicationsCHEVALIER, Pascal; FELLOUS, Cyril; DUTARTRE, Didier et al.IEEE journal of solid-state circuits. 2005, Vol 40, Num 10, pp 2025-2034, issn 0018-9200, 10 p.Conference Paper

0.13 μm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications : THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETINGAVENIER, Grégory; DIOP, Malick; BORET, Samuel et al.IEEE journal of solid-state circuits. 2009, Vol 44, Num 9, pp 2312-2321, issn 0018-9200, 10 p.Article

Si and SiGe faceting during selective epitaxyPRIBAT, Clément; SERVANTON, Germain; DEPOYAN, Linda et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 865-868, issn 0038-1101, 4 p.Conference Paper

Selective etching of Si_1-xGe_x versus Si with gaseous HCl for the formation of advanced CMOS devicesLOUBET, Nicolas; KORMANN, Thomas; CHABANNE, Guillaume et al.Thin solid films. 2008, Vol 517, Num 1, pp 93-97, issn 0040-6090, 5 p.Conference Paper

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growthLOUBET, Nicolas; TALBOT, Alexandre; DUTARTRE, Didier et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S149-S152Conference Paper

Morphology evolution of epitaxial SiGe and Si in patternsSEISS, Birgit; DUTARTRE, Didier.Solid-state electronics. 2013, Vol 83, pp 18-24, issn 0038-1101, 7 p.Conference Paper

Faceting and nanostructure effects in Si and SiGe epitaxyDUTARTRE, Didier; SEISS, Birgit; CAMPIDELLI, Yves et al.Thin solid films. 2012, Vol 520, Num 8, pp 3163-3169, issn 0040-6090, 7 p.Conference Paper